inchange semiconductor product specification silicon npn power transistors BUL38D description with to-220c package high voltage ,high speed integrated antiparallel collector-emitter diode applications designed for use in li ghting applications and low cost switch-mode power supplies. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 5 a i cm collector current-peak (t p <5 ms) 10 a i b base current 2 a i bm base current-peak (t p <5 ms) 4 a p t total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.56 /w
inchange semiconductor product specification 2 silicon npn power transistors BUL38D characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; l=25mh 450 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 9 v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.2a 0.5 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.4a 0.7 v v cesat-3 collector-emitter saturation voltage i c =3a ;i b =0.75a 1.1 v v besat-1 base-emitter saturation voltage i c =1a ;i b =0.2a 1.1 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.4a 1.2 v i ces collector cut-off current v ce =800v; v be =0 t c =125 100 500 a i ceo collector cut-off current v ce =450v; i b =0 250 a h fe-1 dc current gain i c =10ma ; v ce =5v 10 h fe-2 dc current gain i c =0.5a ; v ce =5v 60 h fe-3 dc current gain i c =2a ; v ce =5v 13 32 v f diode forward voltage i c =2a 1.5 v switching times resistive load t s storage time 1.0 2.2 s t f fall time v cc =150v ,i c =2.5a i b1 =-i b2 =0.5a;t p =30 s 0.8 s ? h fe-1 classifications a b 13-23 22-32
inchange semiconductor product specification 3 silicon npn power transistors BUL38D package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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